Method for modifying insulating or semi-conductive surfaces, and resulting products
AssigneeAlchimer
InventorsChristophe Bureau, Jean Pinson
Life of this patent
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Abstract
The present invention relates to the use of a R—N2+ diazonium salt carrying an aromatic group R, for grafting of the aromatic group onto insulating, semiconductor, binary or ternary compound or composite material surfaces, the diazonium salt being present at a concentration close to its solubility limit, notably at a concentration higher than 0.05 M, and preferably varying between approximately 0.5 M to approximately 4 M.
Claims14
A method of modifying a surface of an insulating material, semiconductor material, binary compound, ternary compound or a composite thereof, the surface being modified by grafting aromatic groups onto said surface, said aromatic groups optionally substituted by functional groups, the aromatic groups being grafted to the surface by a covalent bond, the graft resisting washing by ultrasound,
- said method comprising:
- placing said surface in contact with a diazonium salt, said diazonium salt carrying said aromatic group, at a concentration greater than 0.05 M;
- and
- reducing said diazonium salt by,
- (i) utilizing a reducer,
- (ii) photochemically irradiating a charge transfer complex formed from said diazonium salt, or
- (iii) treating said diazonium salt by ultrasound, to achieve grafting of said aromatic groups onto said surface,
- the surface being placed in the presence of the reduced diazonium salt for a time period of less than 60 minutes.
Dependencies are inferred from the claim text.