Photo nanoimprint lithography

A photo nanoimprint lithography comprising the steps of:

• discretely applying a photo-curable resist drop-wise onto a substrate;
• filling first asperity pattern of a mold with the photo-curable resist by bringing the mold having the first asperity pattern formed therein into contact with the photo-curable resist;
• curing the photo-curable resist by irradiating the resist with a light;
• releasing from the mold, the photo-curable resist which has been photo-cured to form a second asperity pattern on the photo-curable resist, which has been photo-cured;
• and
• forming an intermediary layer which has a larger contact angle against water than that of the substrate and has a predetermined thickness before the step of discretely applying the photo-curable resist drop-wise onto the substrate,
• wherein the thickness the intermediary layer is determined so as to be commensurate with the etching resistance of the resist and the thickness of a base layer, with the thickness of a base layer including the intermediary layer being half or less than a half of the height of the second asperity pattern of the photo-curable resist,
• wherein the intermediary layer comprises a silane coupling agent shown by the following general formula 1:
• YnSiX(4−n) (General formula 1),
• wherein Y represents an alkyl group, a fluoroalkyl croup, a vinyl group, an amino group, phenyl group, a chloroalkyl group, an isocyanate group, or an epoxy group or an organic group comprising them;
• X represents an alkoxyl group, an acetyl group or a halogen;
• and n is an integer of 0 to 3.