Methods and apparatus for sputtering deposition using direct current

A method for depositing material on a substrate comprising:

• delivering direct current power pulses to at least two adjacent electrodes within a plasma sputtering chamber from at least one direct current power source, the at least two adjacent electrodes depositing material on to the substrate, wherein the at least two adjacent electrodes are each configured to operate as an anode, a cathode, and a sputtering target;
• receiving feedback indicative of a first amount of material remaining on either of the at least two adjacent electrodes;
• and
• controlling an amount of power delivered to the at least two adjacent electrodes responsive to the feedback so as to alter the deposition of the material.

A system for depositing material on a substrate in a plasma processing chamber, comprising:

• a direct current power control component configured to deliver a first direct current power pulse having a first polarity and a second direct current power pulse having a second polarity to an electrode within a plasma sputtering chamber, wherein the electrode operates as an anode, a cathode, and a sputtering target;
• a feedback line configured to provide a signal indicative of a target material utilization on the electrode;
• and
• a processor configured to trigger the second direct current power pulse after the first direct current power pulse has been triggered and to modulate, responsive to the signal indicative of the target material utilization, an amount of power applied to the electrode with the first direct current power pulse.