Substrate processing method, storage medium and substrate processing apparatus
AssigneeTokyo Electron Limited
InventorsYoshichika Tokuno, Hiroshi Nagayasu
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Abstract
Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.
Claims10
A substrate processing method that processes substrates, wherein said method employs a common substrate processing apparatus having a function of supplying a substrate with a plurality of kinds of chemical liquids, said substrate processing method comprising:
- processing a substrate with a chemical liquid selected from the plurality of kinds of chemical liquids in the substrate processing apparatus;
- and
- drying a substrate, having been processed with the selected chemical liquid,
- wherein in a case where the processing of the substrate with the selected chemical liquid does not result in increasing of hydrophobicity of the substrate, the drying of the substrate is performed with a first gas being supplied into a processing space around the substrate thereby establishing an atmosphere in the processing space having a first humidity, while in a case where the processing of the substrate with the selected chemical liquid results in increasing of the hydrophobicity of the substrate, the drying of the substrate is performed with a second gas being supplied into the processing space around the substrate thereby establishing an atmosphere in the processing space having a second humidity, and
- wherein the second humidity is lower than the first humidity.
A substrate processing method comprising:
- a first chemical liquid processing step that processes the substrate with a first chemical liquid with a first gas being supplied into a processing space around the substrate thereby establishing an atmosphere in the processing space having a first humidity;
- a rinsing step that rinses the substrate after the first chemical liquid processing step;
- a second chemical liquid processing step that processes the substrate with a second chemical liquid after the rinsing step;
- and
- a drying step that dries the substrate after the second chemical liquid processing step, with an IPA-containing fluid being supplied onto the substrate, and with a second gas being supplied into a space around the substrate thereby establishing an atmosphere in the processing space having a second humidity lower than the first humidity;
- wherein the processing of the substrate with a first chemical liquid does not result in increasing of hydrophobicity of the substrate, and the processing of the substrate with the second chemical liquid results in increasing of hydrophobicity of the substrate, and
- wherein the first chemical liquid processing step, the rinsing step, the second chemical liquid processing step and the drying step are performed with the substrate being held and rotated by a common spin chuck.
Dependencies are inferred from the claim text.