Process for producing silicon carbide single crystal

A process for producing a silicon carbide single crystal, the process comprising:

• homo-epitaxially or hetero-epitaxially growing a silicon carbide single crystal layer on a surface of a single crystal substrate, wherein
• the single crystal substrate surface includes a plurality of substantially parallel undulation ridges that extend in a first direction on the single crystal substrate surface such that the single crystal substrate surface is wavy in a cross-ridge direction that is orthogonal to the first direction in which the undulation ridges extend, the single crystal substrate surface also being wavy in a ridge direction that is parallel to the first direction in which the undulation ridges extend such that each of the undulation ridges has a height that undulates.

A process for producing a silicon carbide single crystal, the process comprising:

• homo-epitaxially or hetero-epitaxially growing a silicon carbide single crystal layer on a surface of a single crystal substrate, wherein
• the single crystal substrate surface includes a plurality of substantially parallel undulations that extend in a first direction on the single crystal substrate surface and a plurality of substantially parallel undulations that extend in a second direction that is substantially orthogonal to the first direction such that each undulation extending in the first direction includes (i) an undulation ridge at a highest part of the undulation that undulates along the first direction on the single crystal substrate surface and (ii) an undulation valley at a lowest part of the undulation that undulates along the first direction on the single crystal substrate surface.