Production process of periodic table group 13 metal nitride crystal and production method of semiconductor device using the same
AssigneeMitsubishi Chemical Corporation
InventorsYoji Arita, Yoshinori Seki, Takeshi Tahara, Yuzuru Sato
Life of this patent
Estimating the term…
Abstract
A Periodic Table Group 13 metal nitride crystal is grown by causing a reaction of a Periodic Table Group 13 metal phase with a nitride-containing molten salt phase to proceed while removing a by-product containing a metal element except for Periodic Table Group 13 metals, from the reaction field. According to this process, a high-quality Periodic Table Group 13 metal nitride bulk crystal can be produced under low pressure or atmospheric pressure.
Claims16
A process for producing a Group 13 metal nitride crystal, comprising reacting a liquid phase (A) containing a metal element of Group 13 of the Periodic Table with any one phase (B) of liquid phase (b1), solid phase (b2) and liquid phase (b3) wherein
- the liquid phase (b1) comprises a molten salt having dissolved therein a nitride containing a metal element except for Group 13 of the Periodic Table,
- the solid phase (b2) and the liquid phase (b3) comprise a composite nitride containing a metal element of Group 13 of the Periodic Table and a metal element except for Group 13 of the Periodic Table to grow a Periodic Table Group 13 metal nitride crystal, and
- the reaction is allowed to proceed while removing a by-product containing a metal element except for metals of Group 13 of the Periodic Table, which is produced by the reaction, from the reaction field.
Dependencies are inferred from the claim text.