US 8,129,756 B2 · Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes of transistors with at least two different extension distances beyond conductive contacting structures

Abstract

A cell of a semiconductor device is disclosed to include a diffusion level including a plurality of diffusion regions separated by inactive regions. The cell also includes a gate electrode level including conductive features defined to extend in only a first parallel direction. Adjacent ones of the conductive features that share a common line of extent in the first parallel direction are fabricated from respective originating layout features that are separated from each other by an end-to-end spacing having a size that is substantially equal across the gate electrode level region and is minimized to an extent allowed by a semiconductor device manufacturing capability. The gate electrode level includes conductive features defined along at least four different virtual lines of extent in the first parallel direction. A width of the conductive features is less than a wavelength of light used in a photolithography process for their fabrication.

An integrated circuit, comprising:

a substrate region;
a gate electrode level region formed above the substrate region, the gate electrode level region including at least six linear-shaped conductive structures each formed to extend lengthwise in a first direction, the at least six linear-shaped conductive structures including
a first linear-shaped conductive structure including a first gate portion that forms a gate electrode of a first transistor of a first transistor type and a second gate portion that forms a gate electrode of a first transistor of a second transistor type, the first linear-shaped conductive structure also including a non-gate portion that extends in the first direction between the first and second gate portions of the first linear-shaped conductive structure,
a second linear-shaped conductive structure including a gate portion that forms a gate electrode of a second transistor of the first transistor type, the second linear-shaped conductive structure also including a non-gate portion that extends in the first direction away from the gate portion of the second linear-shaped conductive structure,
a third linear-shaped conductive structure including a gate portion that forms a gate electrode of a second transistor of the second transistor type, the third linear-shaped conductive structure also including a non-gate portion that extends in the first direction away from the gate portion of the third linear-shaped conductive structure,
a fourth linear-shaped conductive structure including a gate portion that forms a gate electrode of a third transistor of the first transistor type, the fourth linear-shaped conductive structure also including a non-gate portion that extends in the first direction away from the gate portion of the fourth linear-shaped conductive structure,
a fifth linear-shaped conductive structure including a gate portion that forms a gate electrode of a third transistor of the second transistor type, the fifth linear-shaped conductive structure also including a non-gate portion that extends in the first direction away from the gate portion of the fifth linear-shaped conductive structure,
a sixth linear-shaped conductive structure including a first gate portion that forms a gate electrode of a fourth transistor of the first transistor type and a second gate portion that forms a gate electrode of a fourth transistor of the second transistor type, the sixth linear-shaped conductive structure also including a non-gate portion that extends in the first direction between the first and second gate portions of the sixth linear-shaped conductive structure,
wherein the second linear-shaped conductive structure is positioned next to and spaced apart from the first linear-shaped conductive structure,
wherein the third linear-shaped conductive structure is positioned next to and spaced apart from the first linear-shaped conductive structure,
wherein the fourth linear-shaped conductive structure is positioned next to and spaced apart from the sixth linear-shaped conductive structure,
wherein the fifth linear-shaped conductive structure is positioned next to and spaced apart from the sixth linear-shaped conductive structure;
a first conductive contacting structure formed to physically connect to the non-gate portion of the second linear-shaped conductive structure, wherein the non-gate portion of the second linear-shaped conductive structure extends the first direction beyond the first conductive contacting structure and away from the gate portion of the second linear-shaped conductive structure by a first extension distance as measured in the first direction;
a second conductive contacting structure formed to physically connect to the non-gate portion of the third linear-shaped conductive structure, wherein the non-gate portion of the third linear-shaped conductive structure extends in the first direction beyond the second conductive contacting structure and away from the gate portion of the third linear-shaped conductive structure by a second extension distance as measured in the first direction;
a third conductive contacting structure formed to physically connect to the non-gate portion of the fourth linear-shaped conductive structure, wherein the non-gate portion of the fourth linear-shaped conductive structure extends in the first direction beyond the third conductive contacting structure and away from the gate portion of the fourth linear-shaped conductive structure by a third extension distance as measured in the first direction;
and
a fourth conductive contacting structure formed to physically connect to the non-gate portion of the fifth linear-shaped conductive structure, wherein the non-gate portion of the fifth linear-shaped conductive structure extends in the first direction beyond the fourth conductive contacting structure and away from the gate portion of the fifth linear-shaped conductive structure by a fourth extension distance as measured in the first direction,
wherein at least two of the first, second, third, and fourth extension distances are different.

15 more elements

Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes of transistors with at least two different extension distances beyond conductive contacting structures

Life of this patent

Integrated circuit including at least six linear-shaped conductive structures forming gate electrodes of transistors with at least two different extension distances beyond conductive contacting structures

Life of this patent

Abstract

Claims46