Reversible top/bottom MEMS package

A semiconductor device comprising:

• a base substrate having a plurality of metal traces and a plurality of base vias;
• an opening formed through the base substrate;
• a first electronic component attached to the first surface of the base substrate and positioned over the opening, the opening allowing the first electronic device to receive sound waves;
• a second electronic component attached to the first surface of the base substrate next to the first electronic component;
• a first set of wirebonds to couple the first electronic component to the second electronic component;
• a cover substrate having a plurality of metal traces, a plurality of cover vias, a cavity in the cover substrate forming side wall sections around the cavity, the cover substrate attached to the base substrate wherein the first and second electronic components are positioned in the interior of the cavity;
• and
• a plurality of grounding vias formed in the sidewall for coupling ground planes in the base substrate to ground planes in the cover substrate to form an RF shield around the first and second electronic components;
• wherein side sections of the ground vias are exposed.

A semiconductor device comprising:

• a base substrate having a plurality of metal traces, a plurality of base vias, and a plurality of base pads;
• a cover substrate having a plurality of metal traces, a plurality of cover vias, and a plurality of cover pads;
• a cover substrate having a plurality of metal traces, a plurality of cover vias, and a plurality of cover pads, a cavity in the cover substrate forming side wall sections around the cavity;
• an opening formed through the cover substrate into the cavity;
• a first die attached to the first surface of the cover substrate in the cavity and positioned over the opening and electrically attach to the metal traces of the cover substrate, the opening allowing the first die to receive sound waves;
• a second die attached to the first surface of the base substrate and electrically attach to the metal traces of the base substrate;
• pathways formed in the side wall sections to couple ground planes in the base substrate with ground planes in the cover substrate to form an RF shield around the first die and the second die, wherein the pathways are conductive vias;
• and
• means coupled to the metal traces on the base substrate and the metal traces on the cover substrate to form I/O pathways between the base substrate and cover substrate;
• wherein the conductive vias have exposed sides.