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US 8,114,734 B2Granted
Metal capacitor and method of making the same
AssigneeUnited Microelectronics Corp.
InventorChin-Sheng Yang
Life of this patent
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Abstract
A method of making a metal capacitor includes the following steps. A dielectric layer having a metal interconnection and a capacitor electrode is provided. Then, a treatment is performed to increase the dielectric constant of the dielectric layer surrounding the capacitor electrode. The treatment can be UV radiation, a plasma treatment or an ion implantation. Accordingly, the metal capacitor will have a higher capacitance and RC delay between the metal interconnection and the dielectric layer can be prevented.
Claims9
A method of forming a metal capacitor, comprising:
- providing a dielectric layer having a first region and a second region;
- after forming the dielectric layer forming a dual damascene metal interconnection in the first region and forming a damascene capacitor electrode in the second region, and forming a cap layer over both dielectric layer regions;
- and
- performing a treatment on the dielectric layer while the cap layer remains in the second region to make a dielectric constant of the dielectric layer in the second region higher than a dielectric constant of the dielectric layer in the first region.
1 more element
Dependencies are inferred from the claim text.