Formulations for cleaning ion-implanted photoresist layers from microelectronic devices
AssigneeAdvanced Technology Materials, Inc.
InventorsPamela M. Visintin, Michael B. Korzenski, Thomas H. Baum
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Abstract
A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.
Claims15
A method of removing bulk and ion-implanted photoresist and/or post-etch residue material from a microelectronic device having said material thereon, said method comprising contacting the microelectronic device with a removal composition for sufficient time to at least partially remove said material from the microelectronic device, wherein the removal composition includes at least one co-solvent, at least one chelating agent, at least one ion pairing agent selected from the group consisting of pyrrolidinecarbodithiolate salt, trifluoromethanesulfonate salt, trifluoroethyl dithiocarbamate salt, cetyl tetramethylammonium sulfuric acid, cetyl tetramethylammonium bromide, hexadecylpyridinium chloride, tetrabutylammonium bromide, dioctylsulfosuccinate salt, 2,3-dimercapto-1-propanesulfonic acid salt, and combinations thereof, and optionally at least one surfactant.
Dependencies are inferred from the claim text.