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US 8,110,877 B2Granted
Metal-insulator-semiconductor tunneling contacts having an insulative layer disposed between source/drain contacts and source/drain regions
AssigneeIntel Corporation
InventorsNiloy Mukherjee, Gilbert Dewey, Matthew V. Metz, Jack Kavalieros, Robert S. Chau
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Abstract
A contact to a source or drain region. The contact has a conductive material, but that conductive material is separated from the source or drain region by an insulator.
Claims15
A device, comprising:
- a transistor with a source region and a drain region;
- a first interlayer dielectric layer adjacent the transistor;
- a trench through the first interlayer dielectric layer to the source region;
- and
- a conductive source contact in the trench, the source contact being separated from the source region by an insulating layer.
2 more elements
A device, comprising:
- a transistor with a source region and a drain region;
- a source contact, wherein the source contact is not directly adjacent the source region, and wherein a first insulating layer separates the source contact from the source region;
- and
- a drain contact wherein the drain contact is not directly adjacent the drain region, and wherein a second insulating layer separates the drain contact from the drain region.
1 more element
Dependencies are inferred from the claim text.