Semiconductor structure including trench capacitor and trench resistor
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Robert M. Rassel
Life of this patent
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Abstract
A structure and a method for fabrication of the structure use a capacitor trench for a trench capacitor and a resistor trench for a trench resistor. The structure is typically a semiconductor structure. In a first instance, the capacitor trench has a linewidth dimension narrower than the resistor trench. The trench linewidth difference provides an efficient method for fabricating the trench capacitor and the trench resistor. In a second instance, the trench resistor comprises a conductor material at a periphery of the resistor trench and a resistor material at a central portion of the resistor trench.
Claims14
A structure comprising a trench capacitor and a trench resistor located within a single substrate, where a capacitor trench used for the trench capacitor has a narrower linewidth dimension than a resistor trench used for the trench resistor, said trench capacitor comprises a conductor material filling the capacitor trench, and said trench resistor comprises the conductor material located at a periphery of the resistor trench and a resistor material located at a center of the resistor trench wherein the resistor material is separated from the conductor material within the resistor trench by a dielectric material.
A structure comprising:
- a substrate comprising a capacitor trench and a resistor trench located therein, each of the capacitor trench and the resistor trench comprising a conductor region located within at least one of a sidewall and a bottom thereof;
- a dielectric material layer completely covering the conductor region within the capacitor trench but not completely covering the conductor region within the resistor trench;
- a conductor material layer located upon the dielectric material layer and completely filling the capacitor trench but incompletely filling the resistor trench and not contacting the conductor region therein;
- and
- a resistor material layer located filling the resistor trench and contacting the conductor region therein.
A method for fabricating a structure comprising:
- forming a capacitor trench and a resistor trench within a substrate, each of the capacitor trench and the resistor trench comprising a conductor region located within at least one of a sidewall and a bottom thereof;
- forming a dielectric material layer to completely cover the conductor region within the capacitor trench but not completely cover the conductor region within the resistor trench;
- forming a conductor material layer located upon the dielectric material layer and completely filling the capacitor trench but incompletely filling the resistor trench and leaving exposed and not contacting the conductor region therein;
- and
- forming a resistor material layer to fill the resistor trench and contact the conductor region therein.
Dependencies are inferred from the claim text.