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US 8,110,814 B2Granted
Ion sources, systems and methods
AssigneeALIS Corporation
InventorsBilly W. Ward, John A. Notte, IV, Louis S. Farkas, III, Randall G. Percival, Raymond Hill, Klaus Edinger, Lars Markwort, Dirk Aderhold, Ulrich Mantz
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Abstract
Ion sources, systems and methods are disclosed.
Claims20
A method, comprising:
- generating an ion beam with a gas field ion source;
- and
- using the ion beam to determine distribution and abundance of hydrogen in a sample.
A method, comprising:
- generating an ion beam with a gas field ion source;
- interacting the ion beam with a sample, the sample being designed for use in a for nuclear power plant, a military application, and/or a biomedical application;
- and
- detecting scattered hydrogen atoms and/or scattered hydrogen ions to determine a relative abundance and distribution of hydrogen in the sample.
1 more element
A method, comprising:
- generating an ion beam by interacting a gas with a gas field ion source;
- activating an activating gas with the ion beam to provide an activated activating gas;
- using the ion beam to determine information about a semiconductor article, the ion beam having a spot size of 10 nm or less at a surface of the semiconductor article;
- and
- based on the information, adding material to the semiconductor article by deposition of material from the activated activating gas or removing material by the assistance of the activated activating gas,
- wherein, during the method, implantation of Gallium into the semiconductor article is avoided.
3 more elements
Dependencies are inferred from the claim text.