Method for manufacturing semiconductor substrate, display panel, and display device

A manufacturing method of a display panel comprising the steps of:

• cutting each of a plurality of substantially circular silicon wafers of 400 mm or more in diameter into a substantially quadrangular single crystal semiconductor substrate;
• forming a damaged layer by implantation of hydrogen ions in each of the plurality of substantially quadrangular single crystal semiconductor substrates;
• bonding the plurality of substantially quadrangular single crystal semiconductor substrates to a supporting substrate having an insulating surface after the step of forming the damaged layer;
• wherein the bonding the plurality of substantially quadrangular single crystal semiconductor substrates comprises exposing at least a portion of the supporting substrate between at least two of the substantially quadrangular single crystal semiconductor substrates;
• forming a plurality of single crystal semiconductor layers on the supporting substrate so as to be separated from each other, by separating each of the plurality of substantially quadrangular single crystal semiconductor substrates at the damaged layer;
• and forming an element region in one of the plurality of single crystal semiconductor layers, wherein the element region has a screen of more than or equal to 10 inches and less than or equal to 15 inches, wherein a surface area of each of the plurality of substantially quadrangular single crystal semiconductor substrates accounts for 50% or more of a surface area of each of the plurality of substantially circular silicon wafers, and wherein each vertex of the plurality of substantially quadrangular single crystal semiconductor substrates is provided on each circumference of the plurality of substantially circular silicon wafers.

A manufacturing method of a display panel comprising the steps of:

• cutting each of a plurality of substantially circular silicon wafers of 400 mm or more in diameter into a substantially quadrangular single crystal semiconductor substrate;
• forming a damaged layer by implantation of hydrogen ions in each of the plurality of substantially quadrangular single crystal semiconductor substrates;
• bonding the plurality of substantially quadrangular single crystal semiconductor substrates to a supporting substrate having an insulating surface after the step of forming the damaged layer;
• wherein the bonding the plurality of substantially quadrangular single crystal semiconductor substrates comprises exposing at least a portion of the supporting substrate between at least two of the substantially quadrangular single crystal semiconductor substrates;
• forming a plurality of single crystal semiconductor layers on the supporting substrate so as to be separated from each other, by separating each of the plurality of substantially quadrangular single crystal semiconductor substrates at the damaged layer;
• and forming 10 or more display panels having a screen size of more than or equal to 2 inches and less than or equal to 7 inches from each of the plurality of single crystal semiconductor layers, wherein a surface area of each of the plurality of substantially quadrangular single crystal semiconductor substrates accounts for 50% or more of a surface area of each of the plurality of substantially circular silicon wafers, and wherein each vertex of the plurality of substantially quadrangular single crystal semiconductor substrates is provided on each circumference of the plurality of substantially circular silicon wafers.

A manufacturing method of a semiconductor substrate comprising the steps of:

• cutting each of a plurality of substantially circular silicon wafers of 400 mm or more in diameter into a substantially quadrangular single crystal semiconductor substrate;
• forming a damaged layer by implantation of hydrogen ions in each of the plurality of substantially quadrangular single crystal semiconductor substrates;
• bonding the plurality of substantially quadrangular single crystal semiconductor substrates to a supporting substrate having an insulating surface after the step of forming the damaged layer;
• wherein the bonding the plurality of substantially quadrangular single crystal semiconductor substrates comprises exposing at least a portion of the supporting substrate between at least two of the substantially quadrangular single crystal semiconductor substrates;
• and forming a plurality of single crystal semiconductor layers on the supporting substrate so as to be separated from each other, by separating the plurality of substantially quadrangular single crystal semiconductor substrates at the damaged layer, wherein a surface area of each of the plurality of substantially quadrangular single crystal semiconductor substrates accounts for 50% or more of a surface area of each of the plurality of substantially circular silicon wafers, and wherein each vertex of the plurality of substantially quadrangular single crystal semiconductor substrates is provided on each circumference of the plurality of substantially circular silicon wafers.