Apparatus and method for applying coatings onto the interior surfaces of components and related structures produced therefrom

A method for applying at least one coating on a stationary chamber, said method comprising:

• said chamber having a downstream pressure, Pc, with an operating range from about 10−4 to about 103 Torr;
• presenting at least one evaporant source to said chamber;
• presenting primary carrier gas streams comprised of gas molecules to said chamber,
• impinging at least one said evaporant source with at least one electron energetic beam in said chamber to generate an evaporated vapor flux comprised of evaporant molecules;
• and
• said primary carrier gas streams deflecting at least a portion of at least one of said generated evaporated vapor flux, wherein said evaporated flux at least partially coats a portion of said chamber.

An apparatus for applying at least one coating on at least one substrate, said apparatus comprising:

• a chamber;
• said chamber having a downstream pressure, Pc, with an operating range from about 10−4 to about 103 Torr, wherein said at least one substrate is placed in said chamber in a stationary manner, said substrate having a distal end and a proximal end defining a longitudinal section therebetween, said substrate having an interior cavity;
• at least one evaporant source disposed in said chamber;
• primary carrier gas streams comprised of gas molecules provided in said chamber,
• at least one energetic beam, said at least one energetic beam impinging on said evaporant source and generating an evaporated vapor flux comprised of evaporant molecules;
• and
• wherein said primary carrier gas streams deflect at least a portion of said generated evaporated vapor flux by said primary carrier gas streams from an area distal from and external to said stationary substrate into said interior cavity of said stationary substrate thereby coating at least a portion of interior of said longitudinal section.

An apparatus for applying at least one coating on a stationary chamber comprising:

• said chamber having a downstream pressure, Pc, with an operating range from about 10−4 to about 103 Torr;
• at least one evaporant source presented to said chamber;
• primary carrier gas streams comprised of gas molecules to said chamber,
• at least one said evaporant source, said at least one evaporant source be impinged by at least one electron energetic beam in said chamber to generate an evaporated vapor flux comprised of evaporant molecules;
• and
• said primary carrier gas streams deflecting at least a portion of at least one of said generated evaporated vapor flux, wherein said evaporated flux at least partially coats a portion of said chamber.