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US 8,102,700 B2Granted
Unidirectional spin torque transfer magnetic memory cell structure
AssigneeMicron Technology, Inc.
InventorsJun Liu, Gurtej Sandhu
Life of this patent
Estimating the term…
Abstract
Spin torque transfer magnetic random access memory devices configured to be programmed unidirectionally and methods of programming such devices. The devices include memory cells having two pinned layers and a free layer therebetween. By utilizing two pinned layers, the spin torque effect on the free layer from each of the two pinned layers, respectively, allows the memory cells to be programmed with unidirectional currents.
Claims23
A memory cell comprising:
- a top pinned layer;
- a bottom pinned layer;
- a free layer arranged between the top pinned layer and the bottom pinned layer;
- and
- a heat generating layer coupled directly to the bottom pinned layer, wherein the heat generating layer is configured to alter a magnetization of the bottom pinned layer upon activation.
2 more elements
A memory cell comprising a sensing structure comprising:
- a heat generating layer;
- a bottom pinned ferromagnetic layer formed on the heat generating layer, wherein the heat generating layer is configured to alter a magnetization of the bottom pinned ferromagnetic layer when activated;
- a bottom nonmagnetic layer formed on the bottom pinned ferromagnetic layer;
- a free ferromagnetic layer formed on the bottom nonmagnetic layer;
- a top nonmagnetic layer formed on the free ferromagnetic layer;
- and
- a top pinned ferromagnetic layer formed on the top nonmagnetic layer.
4 more elements
Dependencies are inferred from the claim text.