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US 8,101,981 B2Granted
Back-illuminated, thin photodiode arrays with isolating etched trenches between elements
AssigneeArray Optronix, Inc.
InventorsAlexander O. Goushcha, George Papadopoulos, Perry A. Denning
Life of this patent
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Abstract
Back-illuminated, thin photodiode arrays with trench isolation. The trenches are formed on one or both sides of a substrate, and after doping the sides of the trenches, are filled to provide electrical isolation between adjacent photodiodes. Various embodiments of the photodiode arrays and methods of forming such arrays are disclosed.
Claims12
In a back-illuminated photodiode array, a device comprising:
- a structure comprised of a semiconductor of a first conductivity type, having a first conductivity, and having first and second sides;
- an array of photodiodes formed from the first side of the structure, each photodiode having a region of a second conductivity type with a concentration gradually decreasing towards the second side of the structure;
- trenches in the semiconductor structure forming an interconnected matrix surrounding each photodiode, wherein the trenches extend from the second side of the structure;
- the walls of the trenches doped with the first conductivity type to a second conductivity higher than the first conductivity;
- the trenches being filled with electrical isolation material to provide electrical isolation between adjacent photodiodes;
- and
- a region of the first conductivity type proximate to the second side of the structure, the region having a third conductivity higher than the first conductivity.
4 more elements
Dependencies are inferred from the claim text.