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AssigneeAZ Electronic Materials USA Corp.
InventorsGo Noya, Ryuta Shimazaki, Masakazu Kobayashi
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The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method.
A pattern formation method for forming a fine resist pattern, comprising a step in which a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing water-soluble polymer, so as to reduce the effective size of said resist pattern formed by the development, further where the water-soluble polymer is selected from a group consisting of poly-N-methylallylamine, poly-N,N′-dimethylallylamine and poly(N-methyl-3,5-piperidinediylmethylene.
A fined resist pattern formed by the steps of:
A resist substrate-treating solution for reducing the effective size of a resist pattern, which comprises a solvent and an amino group-containing water-soluble polymer and with which a resist pattern formed by development is treated to reduce the effective size thereof, further where the water-soluble polymer is selected from a group consisting of poly-N-methylallylamine, poly-N,N′-dimethylallylamine and poly(N-methyl-3,5-piperidinediylmethylene.
Dependencies are inferred from the claim text.