Pattern inspection apparatus, pattern inspection method, and manufacturing method of semiconductor device

A pattern inspection method comprising:

• scanning a substrate having a pattern formed thereon with a charged particle beam and detecting charged particles generated from the substrate to acquire an image of the pattern;
• performing matching of CAD data for the pattern and the image;
• extracting coordinates of a plurality of points on a line segment which is drawn by use of the CAD data and constitutes an arbitrary polygon figure, and defining the extracted coordinates as a first coordinate group;
• specifying coordinates of edge points in the image that correspond to the plurality of points, and defining the specified coordinates as a second coordinate group;
• calculating differences between the coordinates corresponding to each other from the first and second coordinate group, and calculating statistics each representing a degree of deviation in the matching based on the differences;
• judging whether correction processing is required based on the statistics;
• performing the correction processing to correct the polygon figure when it is determined that the correction processing is required;
• and
• inspecting the pattern by comparing the corrected polygon figure with the image.

A manufacturing method of a semiconductor device comprising:

• executing a manufacturing process of a semiconductor device with respect to a substrate when requested specifications are satisfied as a result of inspecting a pattern formed on the substrate based on a pattern inspection method, the pattern inspection method including:
• scanning a substrate having a pattern formed thereon with a charged particle beam and detecting charged particles generated from the substrate to acquire an image of the pattern;
• performing matching of CAD data for the pattern and the image;
• extracting coordinates of a plurality of points on a line segment which is drawn by use of the CAD data and constitutes an arbitrary polygon figure, and defining the extracted coordinates as a first coordinate group;
• specifying coordinates of edge points in the image that correspond to the plurality of points, and defining the specified coordinates as a second coordinate group;
• calculating differences between the coordinates corresponding to each other from the first and second coordinate group, and calculating statistics each representing a degree of deviation in the matching based on the differences;
• judging whether correction processing is required based on the statistics;
• performing the correction processing to correct the polygon figure when the judgment unit determines that the correction processing is required;
• and
• inspecting the pattern by comparing the corrected polygon figure with the image.