Integrated circuit with gate electrode level region including at least four linear-shaped conductive structures forming gate electrodes of transistors and including extending portions of at least two different sizes

An integrated circuit, comprising:

• a gate electrode level region including at least four linear-shaped conductive structures formed to extend lengthwise in a first direction, the at least four linear-shaped conductive structures including,
• a first linear-shaped conductive structure including a gate portion that forms a gate electrode of a first transistor and an extending portion that extends away from the gate portion of the first linear-shaped conductive structure,
• a second linear-shaped conductive structure including a gate portion that forms a gate electrode of a second transistor and an extending portion that extends away from the gate portion of the second linear-shaped conductive structure,
• a third linear-shaped conductive structure including a gate portion that forms a gate electrode of a third transistor and an extending portion that extends away from the gate portion of the third linear-shaped conductive structure, and
• a fourth linear-shaped conductive structure including a gate portion that forms a gate electrode of a fourth transistor and an extending portion that extends away from the gate portion of the fourth linear-shaped conductive structure,
• wherein the extending portions of the first, second, third, and fourth linear-shaped conductive structures collectively include at least two different extending portion lengths as measured in the first direction, and
• wherein the first, second, third, and fourth transistors include at least one transistor of a first transistor type and at least one transistor of a second transistor type.