Integrated capacitor arrangement for ultrahigh capacitance values

Abstract

An electronic device includes at least one trench capacitor that can also take the form of an inverse structure, a pillar capacitor. An alternating layer sequence of at least two dielectric layers and at least two electrically conductive layers is provided in the trench capacitor or on the pillar capacitor, such that the at least two electrically conductive layers are electrically isolated from each other and from the substrate by respective ones of the at least two dielectric layers. A set of internal contact pads is provided, and each internal contact pad is connected with a respective one of the electrically conductive layers or with the substrate. A range of switching opportunities is opened up that allows tuning the specific capacitance of the capacitor to a desired value.

Dependencies are inferred from the claim text.