Semiconductor device and method of forming WLP with semiconductor die embedded within penetrable encapsulant between TSV interposers

A method of making a semiconductor device, comprising:

• providing a first substrate having a plurality of first conductive vias formed in the first substrate;
• mounting a first semiconductor die over the first substrate electrically connected to the first conductive vias;
• providing a second substrate having a plurality of second conductive vias formed in the second substrate;
• forming an interconnect structure over the first substrate or second substrate;
• mounting the second substrate to the first substrate with a first encapsulant disposed between the first substrate and second substrate to embed the first semiconductor die and interconnect structure in the first encapsulant;
• forming a first insulating layer over the first substrate and first conductive vias;
• forming a first conductive layer over the first insulating layer;
• forming a second insulating layer over the first insulating layer and first conductive layer;
• forming a third insulating layer over the second substrate and second conductive vias;
• forming a second conductive layer over the third insulating layer;
• and
• forming a fourth insulating layer over the third insulating layer and second conductive layer.

A method of making a semiconductor device, comprising:

• providing a first through silicon via (TSV) interposer;
• mounting a first semiconductor die over the first TSV interposer;
• providing a second TSV interposer;
• depositing an encapsulant over the second TSV interposer prior to mounting the second TSV interposer to the first TSV interposer;
• mounting the second TSV interposer to the first TSV interposer and over the first semiconductor die with the encapsulant disposed between the first TSV interposer and second TSV interposer to embed the first semiconductor die in the encapsulant;
• forming an interconnect structure over the first TSV interposer or second TSV interposer to electrically connect the first TSV interposer and second TSV interposer;
• removing a portion of the first TSV interposer;
• removing a portion of the second TSV interposer;
• and
• mounting a second semiconductor die over the second TSV interposer.