Bitline current generator for a non-volatile memory array and a non-volatile memory array
AssigneeFreescale Semiconductor, Inc.
InventorHubert M. Bode
Life of this patent
Estimating the term…
Abstract
A bitline current generator, for a non-volatile memory array which comprises a plurality of memory bitcells and bitlines, comprises a switching means for each bitline for coupling a bitline to a program voltage supply when the bitline is selected for programming and a variable current source for providing a programming current to said selected bitlines. The variable current source is adapted to select a level of said programming current such that the programming of the selected memory bitcells does not disturb the programed state of the unselected memory bitcells on unselected bitlines.
Claims17
A bitline current generator for a floating gate non-volatile memory array, said floating-gate non-volatile memory array comprising a plurality of memory bitcells and bitlines, the bitline current generator comprising:
- a transistor for each bitline for coupling a bitline to a program voltage supply when the bitline is selected for programming;
- a variable current source for providing a programming current to said selected bitline, the variable current source being adapted to select a level of said programming current such that programming of selected memory bitcells on said selected bitline does not disturb a programmed state of unselected memory bitcells on unselected bitlines;
- a programmable current source;
- and
- a current mirror having an input coupled to the programmable current source and an output for providing the programming current;
- wherein the variable current source further comprises a programmable voltage reference, adapted to provide a variable reference voltage to the current mirror.
A bitline current generator for a floating gate non-volatile memory array, said floating-gate non-volatile memory array comprising a plurality of memory bitcells and bitlines, the bitline current generator comprising:
- a transistor for each bitline for coupling a bitline to a program voltage supply when the bitline is selected for programming;
- and
- a variable current source for providing a programming current to said selected bitlines, the variable current source being adapted to select a level of said programming current such that the programming of selected memory bitcells does not disturb a programmed state of unselected memory bitcells on unselected bitlines, wherein the variable current source comprises a programmable voltage reference adapted to provide a variable reference voltage to a current mirror of the variable current source.
Dependencies are inferred from the claim text.