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US 8,077,519 B2Granted
Programming a memory device to increase data reliability
AssigneeMicron Technology, Inc.
InventorFrankie F. Roohparvar
Life of this patent
Estimating the term…
Abstract
Methods for programming a memory array, memory devices, and memory systems are disclosed. In one such method, the target reliability of the data to be programmed is determined. The relative reliability of different groups of memory cells of the memory array is determined. The data is programmed into the group of memory cells of the array having a relative reliability corresponding to the target reliability.
Claims18
A method for programming comprising:
- programming data into areas of a memory array wherein the areas are determined responsive to a target reliability of the data wherein a bit error rate of the data is an indication of the target reliability.
A method for programming a non-volatile memory device, the method comprising:
- determining first particular memory cells of a memory array having a first relative reliability that is greater than a second relative reliability of second particular memory cells;
- determining a type of data to be programmed to the memory array;
- and
- programming the data to either the first or the second particular memory cells responsive to the first and second relative reliabilities and the type of data.
1 more element
A memory device comprising:
- a memory array having relatively high reliability areas of memory cells;
- and
- memory control circuitry for controlling programming of the memory array, the memory control circuitry configured to program the relatively high reliability areas of memory cells with data having a relatively high target reliability wherein the memory control circuitry is further configured to determine which areas of memory cells have the relatively high reliability and which areas of memory cells of the memory array have a relatively low reliability that is less than the relatively high reliability.
Dependencies are inferred from the claim text.