Magnetic memory

A magnetic memory which is provided with a memory cell, the memory cell including a magnetic recording element, an interconnection and a ground line,

• the magnetic recording element comprising:
• a first magnetic layer whose magnetization direction is substantially fixed;
• a magnetic recording layer whose magnetization direction is substantially reversed by spin-polarized electrons passing through the magnetic recording layer;
• and
• a first nonmagnetic layer provided between the first magnetic layer and the magnetic recording layer,
• wherein the interconnection is provided above the magnetic recording element to generate a radio-frequency current-induced magnetic field, the radio-frequency current-induced magnetic field acting in a direction substantially perpendicular to a magnetization easy axis of the magnetic recording layer, by passing a radio-frequency current through the interconnection, and
• the ground line is provided on a side opposite to the magnetic recording element with respect to the interconnection.