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US 8,077,507 B2Granted
Phase-change memory device
AssigneeHynix Semiconductor Inc.
InventorKyoung-Wook Park
Life of this patent
Estimating the term…
Abstract
A phase-change memory device includes a data write control unit configured to generate write control signals according to a data combination of a plurality of input data and output write control codes with a code update period controlled according to an activation period of one of the write control signal, and a data write unit configured to output a program current in response to the write control signals and control a level of the program current according to a code combination of the write control codes.
Claims15
A semiconductor memory device comprising:
- a memory cell having variable resistance;
- and
- a control unit configured to generate a program current for controlling the resistance of the memory cell to have a multi-level in response to a plurality of input data, wherein the control unit is configured to control a supply time and a level of the program current so that both the supply time and the level of the program current are set differently in response to different combinations of the input data, respectively.
Dependencies are inferred from the claim text.