Shallow trench type quadri-cell of phase-change random access memory (PRAM)

A phase-change random access memory (PRAM) arrangement, comprising:

• a plurality of phase-change random access memory (PRAM) cells, wherein each of the PRAM cells includes:
• a heater resistor;
• a common phase change material (PCM) coupled to the heater resistor of each of the plurality of PRAM cells;
• a common top electrode coupled to the common phase change material (PCM);
• and
• a second via interconnect coupled to the common top electrode, the second via having axis;
• wherein the heater resistor of each of the plurality of PRAM cells is radially disposed with respect to the axis of the second via interconnect and wherein an active region between the heater resistor of each of the plurality of PRAM cells and the common phase change material (PCM) is defined by a thickness of the heater resistor.

A method of forming a phase-change random access memory (PRAM) cell, the method comprising:

• forming a heater resistor;
• forming a phase change material (PCM) coupled to the heater resistor;
• forming a top electrode coupled to the phase change material (PCM);
• and
• forming a second via interconnect coupled to the to electrode the second via interconnect having an axis;
• wherein the heater resistor is radially disposed with respect to the axis of the second via interconnect and wherein an active region between the heater resistor and the phase change material (PCM) is defined by a thickness of the heater resistor.

A method of forming a phase-change random access memory (PRAM) arrangement, the method comprising:

• forming a plurality of phase-change random access memory (PRAM) cells, wherein each of the PRAM cells includes a heater resistor;
• forming a common phase change material (PCM) coupled to the heater resistor of each of the plurality of PRAM cells;
• forming a top electrode coupled to the common phase change material (PCM);
• and
• forming a second via interconnect coupled to the to electrode the second via interconnect having an axis;
• wherein the heater resistor of each of the plurality of PRAM cells is radially disposed with respect to the axis of the second via interconnect and wherein an active region between the heater resistor of each of the plurality of PRAM cells and the phase change material is defined by a thickness of the heater resistor.

A phase-change random access memory (PRAM) cell, comprising:

• a resistive means for generating heat;
• and
• a phase change means for allowing phase change coupled to the resistive means;
• a second electrode means for electrically connecting the PRAM cell coupled to the phase change means;
• and
• a second interconnect means for providing electrical connection to the second electrode means the second interconnect means having an axis;
• wherein the resistive means is radially disposed with respect to the axis of the second interconnect means and wherein an active region between the resistive means and the phase change means is defined by a thickness of the resistive means.

A method of forming a phase-change random access memory (PRAM) cell, the method comprising:

• step for forming a heater resistor;
• step for forming a phase change material (PCM) coupled to the heater resistor;
• step for forming a top electrode coupled to the phase change material (PCM);
• and
• step for forming a second via interconnect that is coupled to the to electrode, the second via interconnect having an axis;
• wherein the heater resistor is radially disposed with respect to the axis of the second via interconnect and wherein an active region between the heater resistor and the phase change material (PCM) is defined by a thickness of the heater resistor.