Electronic devices utilizing spin torque transfer to flip magnetic orientation

An electronic device comprising:

• a magnetization controllable structure comprising:
• a first polarizing layer;
• and
• a first stabilizing layer;
• a tunnel barrier structure;
• and
• a magnetization controlling structure comprising:
• an antiferromagnetic layer;
• and
• a ferromagnetic layer exchange coupled to the antiferromagnetic layer,
• wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controllable structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure,
• wherein the electronic device has two stable overall magnetic configurations, and
• wherein the first stabilizing layer is chosen from the group consisting of:
• alloys of gadolinium (Gd), alloys of terbium (Tb), alloys of dysprosium (Dy), alloys of cobalt (Co) and alloys of samarium (Sm).

A method comprising the steps of:

• providing a device, the device comprising:
• a magnetization controllable structure comprising:
• a first polarizing layer;
• and
• a first stabilizing layer;
• a tunnel barrier structure;
• and
• a magnetization controlling structure
• wherein the tunnel barrier structure is between the magnetization controlling structure and the magnetization controllable structure and the first polarizing layer is between the first stabilizing layer and the tunnel barrier structure,
• wherein the electronic device has two stable overall magnetic configurations, and
• wherein the first stabilizing layer is chosen from the group consisting of:
• alloys of gadolinium (Gd), alloys of terbium (Tb), alloys of dysprosium (Dy), alloys of cobalt (Co) and alloys of samarium (Sm);
• applying a first current to the device;
• and
• applying a second current to the device.