Semiconductor integrated memory circuit and trimming method thereof
AssigneeKabushiki Kaisha Toshiba
InventorsAtsushi Kawasumi, Yukihiro Urakawa
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Abstract
A latch circuit includes first and second inverters connected in a cross-coupling manner at a first node and a second node. A voltage application circuit applies a hot carrier generation voltage for generating hot carrier at a transistor included in the first inverter or the second inverter. An inverting circuit generates an inversion signal as an inverted signal of an amplified signal provided from the latch circuit to the bit line pair to provide the inversion signal to the first node and the second node.
Claims19
A semiconductor integrated memory circuit, comprising:
- a bit line pair comprising a first bit line and a second bit line;
- a first latch circuit including first and second inverters connected in a cross-coupling manner at a first node and a second node;
- an inverting circuit operative to generate inversion signals as inverted signals of amplified signals, the amplified signals being provided from the first latch circuit to the bit line pair;
- and
- a voltage application circuit operative to provide the inversion signals from the inverting circuit to the first node and the second node, thereby applying apply a hot carrier generation voltage for generating hot carrier at a transistor included in the first inverter or the second inverter.
A method of trimming a latch circuit in a semiconductor integrated memory circuit, the latch circuit including first and second inverters connected in a cross-coupling manner at a first node and a second node, the method comprising:
- generating, with an inverting circuit, inversion signals by inverting amplified signals supplied from the latch circuit to a bit line pair;
- supplying the inversion signals from the inverting circuit to the first node and the second node, thereby applying a hot-carrier generation signal for generating hot carrier in a transistor included in the latch circuit.
Dependencies are inferred from the claim text.