Resistive memory device and operating method thereof

An operating method of a resistive memory device, comprising the steps of:

• carrying out memory operation of performing writing or erasing of data depending on polarity of an inter-line voltage between a first line and a second line for a storage element whose data storage state changes based on resistance change dependent on an application voltage;
• and
• stopping supply of the inter-line voltage on a side of the first line at end of the memory operation to discharge the first line by an inter-line voltage at the time of the stop, and reading out magnitude of an element current flowing through the storage element at the time of the discharge based on potential change of the first line, wherein
• the step of stopping supply includes the sub-step of reversing polarity of the inter-line voltage between the first line and the second line to polarity different from polarity at the time of latest voltage supply to the first line by potential operation of one of the first line and the second line before stop of voltage supply to the first line or since end of a discharge period of the first line by the element current, and
• the sub-step of reversing polarity is carried out in the step of stopping supply after one of the writing and the erasing, and the sub-step of reversing polarity is not carried out in the step of stopping supply after the other of the writing and the erasing.