Method of programming, erasing and repairing a memory device
AssigneeSpansion LLC
InventorsSwaroop Kaza, Sameer Haddad
Life of this patent
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Abstract
A method of programming and erasing a memory device is provided. The memory device includes first and second electrodes and a switching layer therebetween. A first on-state resistance characteristic of the memory device is provided in programming the memory device by application of a first voltage to the gate of a transistor in series with the memory device. Other on-state resistance characteristics of the memory device, different from the first on-state resistance characteristic, may be provided by application of other voltages, different from the first voltage, to the gate of the transistor.
Claims7
A method of programming a memory device, the memory device comprising first and second electrodes and a switching layer between the first and second electrodes, the method comprising:
- providing the memory device having a plurality of selectable conductive on-resistance states;
- programming the memory device, wherein the programming includes
- applying a constant voltage to the first electrode of the memory device, wherein the second electrode of the memory device is coupled to a transistor;
- applying a selected voltage to a gate of the transistor in series with the memory device, wherein the selected voltage is one of a plurality of predetermined voltages;
- and
- reading a programmed state of the memory device, wherein both erasing of the memory device and the programming of the memory device include applying across the memory device a higher to a lower electrical potential in the direction from the first electrode to the second electrode.
Dependencies are inferred from the claim text.