Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsKanji Hayata, Akira Kuriyama, Masatoshi Hase, Hidetoshi Matsumoto
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AssigneeRenesas Electronics Corporation
InventorsKanji Hayata, Akira Kuriyama, Masatoshi Hase, Hidetoshi Matsumoto
Estimating the term…
The present invention provides a technology capable of achieving an improvement in the characteristic of a power amplifier when a power amplifier mounted onto mobile communication equipment such as a cellular phone is comprised of the balance amplifier. One feature of an embodiment resides in that each of passive parts disposed in a low-band signal negative path and each of passive parts disposed in a low-band signal positive path are placed in positions where they are symmetric with respect to a center line of a semiconductor chip. Thus, the symmetry between the low-band signal negative path and the low-band signal positive path is enhanced. As a result, a loss in matching due to the difference between the low-band signal negative path and the low-band signal positive path can be enough reduced, and the characteristic of a low-band signal balance amplifier can be enhanced.
A semiconductor device comprising a balance amplifier type power amplifier comprising a balance amplifier type first power amplifier comprised of an amplifier for a first negative path and an amplifier for a first positive path, and a second power amplifier comprised of an amplifier for a second negative path and an amplifier for a second positive path, said semiconductor device comprising:
Dependencies are inferred from the claim text.