Integrated smart power switch

A method of controlling operation of a controllable semiconductor device, the method comprising:

• controlling a first operating parameter of a controllable semiconductor device so as to enable the controllable semiconductor device to operate, the controllable semiconductor device associated with a first operating parameter and a second operating parameter, wherein at least the first operating parameter is a parameter that is controllable while the controllable semiconductor device is operating;
• monitoring the second operating parameter of the controllable semiconductor device;
• monitoring a third operating parameter for the controllable semiconductor device, the third operating parameter comprising at least one of an environmental and a mechanical condition affecting the controllable semiconductor device;
• accessing device data information relating to the controllable semiconductor device, wherein the device data comprises at least one of a default drain to source voltage (VDS) boundary, a default power boundary (PB), a default RMS current boundary (IDRMS), and a default RDS(on) limited current boundary;
• determining a first predicted value dependent on the device data;
• comparing the monitored second operating parameter with the first predicted value, and, if a first condition is detected based on this comparison, dynamically determining a safe operating area (SOA) condition for the controllable semiconductor device based on the first condition, the device data, and on a predetermined reliability characteristic of the controllable semiconductor device;
• dynamically modifying the first operating parameter, while the controllable semiconductor is operating, so as to ensure that the controllable semiconductor device operates in accordance with both the SOA condition and with the predetermined reliability characteristic of the controllable semiconductor device.