Memory devices having contact features
AssigneeRound Rock Research, LLC
InventorSteven T. Harshfield
Life of this patent
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Abstract
Annular, linear, and point contact structures are described which exhibit a greatly reduced susceptibility to process deviations caused by lithographic and deposition variations than does a conventional circular contact plug. In one embodiment, a standard conductive material such as carbon or titanium nitride is used to form the contact. In an alternative embodiment, a memory material itself is used to form the contact. These contact structures may be made by various processes, including chemical mechanical planarization and facet etching.
Claims16
A memory device comprising:
- a first conductive layer;
- a first insulative layer disposed on the first conductive layer, wherein the first insulative layer comprises a contact structure formed therethrough;
- a second conductive layer disposed on the first insulative layer and in the contact structure;
- a second insulative layer disposed on the second conductive layer and in the contact structure, wherein the second insulative layer comprises openings to expose edges of the second conductive layer;
- and
- a memory material disposed on the second insulative layer and in the contact structure, wherein the memory material is in direct contact with the edges of the second conductive layer.
A memory device comprising:
- a first conductive layer;
- a first insulative layer disposed on the first conductive layer, wherein the first insulative layer comprises a contact structure formed therethrough;
- a memory layer disposed on the first insulative layer and in the contact structure;
- a second insulative layer disposed on the memory layer and in the contact structure, wherein the second insulative layer comprises openings to expose edges of the memory layer;
- and
- a second conductive layer disposed on the second insulative layer and in the contact structure, wherein the second conductive layer is in direct contact with the edges of the memory layer.
A memory device comprising:
- a first conductive layer;
- a first insulative layer disposed on the first conductive layer, wherein the first insulative layer comprises a contact structure;
- a first material disposed on the first insulative layer and on the contact structure;
- a second insulative layer disposed on the first material and on the contact structure, wherein the second insulative layer comprises openings to expose edges of the first material;
- and
- a second material disposed on the second insulative layer and in the contact structure, wherein the second material is in direct contact with the edges of the first material.
A memory device comprising:
- a substrate having a conductive region;
- a first insulative material formed on the conductive region;
- a contact hole formed in the first insulative material and exposing at least a portion of the conductive region, the contact hole having a bottom surface and a sidewall surface;
- a first conductive material disposed on the bottom surface and the sidewall surface, the first conductive material partially filling the contact hole;
- a second insulative material disposed on the first conductive material in the contact hole, the second insulative material filling the contact hole and leaving exposed a peripheral portion of the first conductive material on the sidewall surface;
- a memory material formed over at least a portion of the exposed peripheral portion of the first conductive material;
- and
- a second conductive material formed over the memory material.
Dependencies are inferred from the claim text.