Semiconductor device with pads of enhanced moisture blocking ability

A semiconductor device comprising:

• a semiconductor substrate;
• a circuit portion including a plurality of semiconductor elements formed on said semiconductor substrate;
• lamination of insulator covering said circuit portion, formed on said semiconductor substrate and including a passivation film as an uppermost layer having an opening;
• a ferro-electric capacitor formed in said lamination of insulator;
• a wiring structure formed in said lamination of insulator and connected to said semiconductor elements and said ferro-electric capacitor;
• a pad electrode structure connected to said wiring structure, formed in said lamination of insulator and exposed in the opening of said passivation film;
• a conductive pad protection film including a Pd film, formed on said lamination of insulator, covering said pad electrode structure via the opening of said passivation film, and extending on said passivation film;
• and
• a stud bump or a bonding wire coupling to a partial area of said conductive pad protection film, and connected to said pad electrode structure via said conductive pad protection film,
• wherein said pad electrode structure has an uppermost surface having a flaw.