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US 8,076,767 B2Granted
Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsTomoaki Uno, Masaki Shiraishi, Nobuyoshi Matsuura, Toshio Nagasawa
Life of this patent
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Abstract
A non-insulated DC-DC converter has a power MOS-FET for a highside switch and a power MOS-FET for a lowside switch. In the non-insulated DC-DC converter, the power MOS-FET for the highside switch and the power MOS-FET for the lowside switch, driver circuits that control operations of these elements, respectively, and a Schottky barrier diode connected in parallel with the power MOS-FET for the lowside switch are respectively formed in four different semiconductor chips. These four semiconductor chips are housed in one package. The semiconductor chips are mounted over the same die pad. The semiconductor chips are disposed so as to approach each other.
Claims16
A semiconductor device including a DC-DC converter, comprising:
- a first die pad including an input power supply terminal;
- a second die pad including an output terminal;
- a third die pad;
- a wiring section including a reference potential terminal;
- a first semiconductor chip disposed over the first die pad, which includes a high side MOSFET of the DC-DC converter and includes a first gate electrode pad, a first source electrode pad and a first drain electrode of the high side MOSFET,
- the first drain electrode being coupled to the input power supply terminal;
- a second semiconductor chip disposed over the second die pad, which includes a low side MOSFET of the DC-DC converter and includes a second gate electrode pad, a second source electrode pad and a second drain electrode of the low side MOSFET,
- the second drain electrode being coupled to the output terminal;
- a third semiconductor chip disposed over the third die pad, which includes a first driver circuit for driving the high side MOSFET and a second driver circuit for driving the low side MOSFET, and includes a first electrode pad electrically coupled to an output of the first driver circuit and a second electrode pad electrically coupled to an output of the second driver circuit,
- the first electrode pad of the third semiconductor chip and the first gate electrode pad of the first semiconductor chip being coupled via a first bonding wire,
- the second electrode pad of the third semiconductor chip and the second gate electrode pad of the second semiconductor chip being coupled via a second bonding wire;
- a first metal plate wiring coupled to the first source electrode pad of the first semiconductor chip and the second die pad;
- a second metal plate wiring coupled to the second source electrode pad of the second semiconductor chip and the wiring section;
- a Schottky Barrier Diode, an anode and a cathode of the Schottky Barrier Diode being coupled to the second source electrode pad and the second drain electrode of the second semiconductor chip, respectively;
- and
- a resin body covering the first, second and third semiconductor chips.
13 more elements
A semiconductor device including a DC-DC converter, comprising:
- a first die pad including an input power supply terminal;
- a second die pad including an output terminal;
- a third die pad;
- a wiring section including a reference potential terminal;
- a first semiconductor chip disposed over the first die pad, which includes a high side MOSFET of the DC-DC converter and includes a first gate electrode pad, a first source electrode pad and a first drain electrode of the high side MOSFET,
- the first drain electrode being coupled to the input power supply terminal;
- a second semiconductor chip disposed over the second die pad, which includes a low side MOSFET of the DC-DC converter and includes a second gate electrode pad, a second source electrode pad and a second drain electrode of the low side MOSFET,
- the second drain electrode being coupled to the output terminal;
- a third semiconductor chip disposed over the third die pad, which includes a first driver circuit driving the high side MOSFET and a second driver circuit for driving the low side MOSFET, and includes a first electrode pad electrically coupled to an output of the first driver circuit and a second electrode pad electrically coupled to an output of the second driver circuit,
- the first electrode pad of the third semiconductor chip and the first gate electrode pad of the first semiconductor chip being coupled via a first wire,
- the second electrode pad of the third semiconductor chip and the second gate electrode pad of the second semiconductor chip being coupled via a second wire;
- a plurality of first bonding wires coupled to the first source electrode pad of the first semiconductor chip and the second die pad;
- a plurality of second bonding wires coupled to the second source electrode pad of the second semiconductor chip and the wiring section;
- a Schottky Barrier Diode, an anode and a cathode of the Schottky Barrier Diode being coupled to the second source electrode pad and the second drain electrode of the second semiconductor chip, respectively;
- and
- a resin body covering the first, second and third semiconductor chips.
13 more elements
Dependencies are inferred from the claim text.