Semiconductor device having electrical devices mounted to IPD structure and method of shielding electromagnetic interference

A semiconductor device, comprising:

• an integrated passive device (IPD) structure;
• a first electrical device mounted to a first surface of the IPD structure;
• an encapsulant deposited over the first electrical device and IPD structure;
• and
• a shielding layer formed over the encapsulant and electrically connected to a conductive channel in the IPD structure to isolate the first electrical device from interference.

A semiconductor device, comprising:

• an integrated passive device (IPD) structure;
• a first electrical device mounted to a first surface of the IPD structure;
• an encapsulant deposited over the first electrical device and IPD structure;
• a shielding layer formed over the encapsulant;
• and
• an interconnect structure formed over a second surface of the IPD structure opposite the first surface of the IPD structure, the interconnect structure being electrically connected to the first electrical device and IPD structure, the shielding layer being electrically connected to a conductive channel in the IPD structure to isolate the first electrical device from interference.

A semiconductor device, comprising:

• a substrate;
• a circuit structure formed over the substrate;
• a first electrical device mounted to a first surface of the circuit structure;
• an encapsulant deposited over the first electrical device and circuit structure;
• a shielding layer formed over the encapsulant;
• and
• an interconnect structure formed over a second surface of the circuit structure opposite the first surface of the circuit structure, the interconnect structure being electrically connected to the first electrical device and circuit structure, the shielding layer being electrically connected to a conductive channel in the circuit structure to isolate the first electrical device from interference.