Semiconductor device and method of manufacturing the same
OwnerMitsuo Umemoto, Shigehito Matsumoto +4inventors
InventorsMitsuo Umemoto, Shigehito Matsumoto, Hirotoshi Kubo, Yukari Shirahata, Masamichi Yamamuro, Koujiro Kameyama
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Abstract
Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
Claims7
A reverse-mounted semiconductor device comprising:
- a semiconductor substrate;
- a three-terminal semiconductor element including a BIP transistor formed on the semiconductor substrate;
- three pad electrodes provided respectively in different regions around the semiconductor element, each of the three pad electrodes connected through wiring to one of the three electrodes of the semiconductor chip, respectively;
- through regions opened on a back surface of the semiconductor substrate, and exposing the three pad electrodes, respectively;
- and
- three backside pad electrodes provided on the back surface of the semiconductor substrate, and connected respectively with the three pad electrodes being in contact with feedthrough electrodes extending respectively to the three through regions, the backside pad electrodes comprising a backside base electrode, a backside collector electrode, and a backside emitter electrode,
- wherein the backside emitter electrode is in direct contact with the back surface of the semiconductor substrate, and each of the backside base electrode and backside collector electrode is insulated from the back surface of the semiconductor substrate.
A reverse-mounted semiconductor device comprising:
- a semiconductor chip including a semiconductor substrate on which at least a semiconductor element is formed, as well as a first electrode, a second electrode, and a control electrode controlling a current flowing through the first and second electrodes, the first, second, and control electrodes being provided on a front surface of the semiconductor substrate;
- a first pad electrode provided in a first region around the chip by a first wiring electrically connected to the first electrode and extending to the first region;
- a second pad electrode provided in a second region around the chip by a second wiring electrically connected to the second electrode and extending to the second region;
- a third pad electrode provided in a third region around the chip by a third wiring electrically connected to the control electrode and extending to the third region;
- first, second and third through regions formed respectively on back surfaces of the first, second and third pad electrodes to expose the first, second and third pad electrodes from a back surface of the semiconductor substrate;
- first, second and third feedthrough electrodes being electrically in contact, respectively, with the first, second and third pad electrodes, which are exposed from the back surface of the semiconductor substrate, and respectively covering side walls of the through regions;
- and
- first, second and third backside electrodes electrically connected with the first, second and third feedthrough electrodes, respectively, and provided on the back surface of the semiconductor substrate, wherein the second backside electrode is in direct contact with the back surface of the semiconductor substrate, and each of the first backside electrode and the third backside electrode is insulated from the back surface of the semiconductor substrate.
Dependencies are inferred from the claim text.