Semiconductor device

A semiconductor device comprising:

• a first insulating layer;
• a semiconductor layer provided on the first insulating layer;
• a first semiconductor region selectively provided in the semiconductor layer;
• a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region;
• a third semiconductor region provided in the semiconductor layer, being in contact with the first semiconductor region, and having a conductivity type opposite to that of the first semiconductor region;
• a first main electrode provided in contact with the first semiconductor region;
• a second main electrode provided in contact with the second semiconductor region;
• a second insulating layer provided on the semiconductor layer;
• a first conductive material provided in the second insulating layer above a portion of the semiconductor layer located between the first semiconductor region and the second semiconductor region, the first conductive material including a control electrode portion provided above the third semiconductor region;
• a second conductive material provided in a trench, passing through the semiconductor layer, directly contacting the first insulating layer, and being in contact with the first conductive material, and provided in a trench provided in a portion of the third semiconductor region opposed to the control electrode portion and has a bottom on the first insulating layer side.

A semiconductor device comprising:

• an insulating layer;
• a semiconductor layer provided on the insulating layer;
• a first semiconductor region selectively provided in the semiconductor layer;
• a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region;
• a first main electrode provided in contact with the first semiconductor region;
• a second main electrode provided in contact with the second semiconductor region;
• a conductive material selectively provided in a portion that does not overlap the area directly below the semiconductor layer, in the insulator layer;
• wherein the conductive material is provided in the insulating layer below the semiconductor layer.

A semiconductor device comprising:

• an insulating layer;
• a semiconductor layer provided on the insulating layer;
• a first semiconductor region selectively provided in the semiconductor layer;
• a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region;
• a first main electrode provided in contact with the first semiconductor region;
• a second main electrode provided in contact with the second semiconductor region;
• a conductive material selectively provided in a portion that does not overlap the area directly below the semiconductor layer, in the insulator layer,
• one end of the conductive material being connected to the first main electrode and the other end being connected to the second main electrode.

A semiconductor device comprising:

• an insulating layer;
• a semiconductor layer provided on the insulating layer;
• a first semiconductor region selectively provided in the semiconductor layer;
• a second semiconductor region selectively provided in the semiconductor layer and spaced from the first semiconductor region;
• a third semiconductor region provided in the semiconductor layer, being in contact with the first semiconductor region, and having a conductivity type opposite to that of the first semiconductor region;
• a first main electrode provided in contact with the first semiconductor region;
• a second main electrode provided in contact with the second semiconductor region;
• a conductive material selectively provided in a portion that does not overlap the area directly below the semiconductor layer, in the insulator layer, the conductive material including a first control electrode portion that is provided in the insulating layer under a second portion of the control electrode provided above the insulating layer and that is in contact with the control electrode.