Image sensor
AssigneeDongbu HiTek Co., Ltd.
InventorHa Kyu Choi
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Abstract
Embodiments relate to an image sensor and a method of manufacturing the image sensor. An image sensor according to the embodiment includes: silicon patterns that are formed on a flexible substrate; a device isolation pattern that is formed between the silicon patterns; a circuit layer that is formed on the silicon patterns and has a first isolation pattern directly connected with the device isolation pattern; and a wiring layer that is formed on the circuit layer and includes a second isolation pattern corresponding to the first isolation pattern, and a wiring electrically connected with the circuit layer. The embodiments provide a flexible image sensor that can be applied to a variety of products and a method of manufacturing the flexible image sensor.
Claims9
An image sensor comprising:
- silicon patterns formed on a flexible substrate;
- a device isolation pattern formed between the silicon patterns;
- a reflective pattern formed between a portion of the silicon patterns and the flexible substrate;
- a circuit layer formed on the silicon patterns and having a first isolation pattern directly connected with the device isolation pattern;
- and
- a wiring layer formed on the circuit layer and including a second isolation pattern corresponding to the first isolation pattern and a wiring electrically connected with the circuit layer.
Dependencies are inferred from the claim text.