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US 8,076,740 B2Granted
Photo detector with a quantum dot layer
AssigneeFujitsu Limited
InventorsYasuhito Uchiyama, Hironori Nishino
Life of this patent
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Abstract
A photo detector is provided with a plurality of quantum dot layers and first conductive type contact layers provided at both sides of the plurality of quantum dot layers so as to sandwich them; a second conductive type impurity is doped in a first semiconductor layer formed between one first conductive type contact layer and a first quantum dot layer which is closest to the one first conductive type contact layer so that it results in a barrier against a carrier positioned at the one first conductive contact layer.
Claims10
A photo detector, comprising:
- a plurality of quantum dot layers being stacked, each of the plurality of quantum dot layers including a plurality of quantum dots and a buried layer which buries the plurality of quantum dots, the buried layer being a first conductive type semiconductor layer;
- and
- first conductive type contact layers provided to sandwich the plurality of quantum dot layers on opposite sides,
- wherein a second conductive type impurity being different from a first conductive type impurity is doped in a first semiconductor layer formed between one of the first conductive type contact layers and a first quantum dot layer closest to the one of the first conductive type contact layers to form a barrier against carriers positioned in the one of the first conductive type contact layers;
- the first semiconductor layer is formed of a material consisting of a single material composition;
- the first semiconductor layer and the buried layer comprise the material and
- one face of the first semiconductor layer is in contact with the first quantum dot layer closest to the one of the first conductive type contact layers, and another face of the first semiconductor layer is in contact with the one of the first conductive type contact layers.
4 more elements
A photo detector comprising:
- a plurality of quantum dot layers being stacked, each of the plurality of quantum dot layers including a plurality of quantum dots and a buried layer which buries the plurality of quantum dots, the buried layer being a first conductive type semiconductor layer;
- and
- first conductive type contact layers provided to sandwich the plurality of quantum dot layers on opposite sides,
- wherein a second conductive type impurity being different from a first conductive type impurity is doped in a first semiconductor layer formed between one of the first conductive type contact layers and a first quantum dot layer closest to the one of the first conductive type contact layers to form a barrier against carriers positioned in the one of the first conductive type contact layers;
- the first semiconductor layer and the buried layer comprise a material having a same composition;
- and
- the second conductive type impurity is doped in a second semiconductor layer formed between the other of the first conductive type contact layers and quantum dots which are included in a second quantum dot layer closest to the other of the first conductive type contact layers to form a barrier against carriers positioned in the other of the first conductive type contact layers.
4 more elements
Dependencies are inferred from the claim text.