Semiconductor device and method for manufacturing the same

A semiconductor device, comprising:

• a silicon carbide semiconductor substrate including a silicon carbide layer;
• a high-concentration impurity region provided in the silicon carbide layer;
• an ohmic electrode electrically connected with the high-concentration impurity region;
• a channel region being in direct contact with the high-concentration impurity region;
• a gate insulating layer provided on the channel region;
• and
• a gate electrode provided on the gate insulating layer;
• wherein the ohmic electrode contains an alloy of titanium, silicon and carbon, and the gate electrode contains titanium silicide,
• wherein the ohmic electrode includes a reaction layer formed of the alloy of titanium, silicon and carbon;
• and
• the reaction layer in the ohmic electrode is in direct contact with the high-concentration impurity region.