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US 8,076,731 B2Granted
Semiconductor device including a halo layer and method of fabricating the same
AssigneeKabushiki Kaisha Toshiba
InventorMisa Awano
Life of this patent
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Abstract
A semiconductor device 1 according to one embodiment of the invention includes: a semiconductor substrate 10; a convex region 12 provided on the semiconductor substrate 10; a gate insulating film 100 provided on the convex region 12; a channel region 101 located in the convex region 12 under the gate insulating film 100; source/drain regions 115 provided on both sides of the convex region 12 and having extensions 115a on both sides of the channel region 101; and a halo layer 110 provided between the convex region 12 and the source/drain region 115 so as to contact with the convex region 12.
Claims5
A semiconductor device, comprising:
- a semiconductor substrate;
- a convex region provided in the semiconductor substrate;
- a gate insulating film provided on the convex region;
- a channel region located in the convex region under the gate insulating film;
- source/drain regions provided on both sides of the convex region and having extensions on both sides of the channel region;
- and
- a halo layer provided between the convex region and the source/drain region so as to contact with the convex region, wherein
- boundaries are provided between the halo layer and the source/drain region and between the halo region and the convex region and impurity concentration is steeply changed at the boundaries.
5 more elements
Dependencies are inferred from the claim text.