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US 8,076,721 B2Granted
Fin structures and methods of fabricating fin structures
AssigneeMicron Technology, Inc.
InventorsSahn D. Tang, Gordon Haller
Life of this patent
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Abstract
There is provided fin structures and methods for fabricating fin structures. More specifically, fin structures are formed in a substrate. The fin structures may include two fins separated by a channel, wherein the fins may be employed as fins of a field effect transistor. The fin structures are formed below the upper surface of the substrate, and may be formed without utilizing a photolithographic mask to etch the fins.
Claims12
A structure comprising:
- a substrate having a trench formed therein;
- a first outcropping from the substrate partially defined by a first side of the trench, wherein the first outcropping comprises first fins separated by a first channel;
- a second outcropping from the substrate partially defined by a second side of the trench, wherein the second outcropping comprises second fins separated by a second channel, wherein the upper surfaces of the first outcropping and the second outcropping are recessed below the upper surface of the substrate;
- first spacers formed on upper surfaces of the first fins;
- and
- second spacers formed on upper surfaces of the second fins, wherein the first spacers and the second spacers are configured to mask the first fins and the second fins during an etching process.
3 more elements
A structure comprising:
- a substrate having an upper surface and thickness;
- a plurality of double fin structures formed below the upper surface and within the thickness of the substrate;
- and
- a plurality of trenches formed in the substrate, wherein each of the plurality of trenches is formed between two of the plurality of double fin structures.
1 more element
Dependencies are inferred from the claim text.