Electronic device including a trench and a conductive structure therein

An electronic device comprising a transistor, wherein the transistor comprises:

• a semiconductor layer having a primary surface;
• a conductive structure comprising:
• a horizontally-oriented doped region lying adjacent to the primary surface;
• an underlying doped region spaced apart from the primary surface and the horizontally-oriented doped region;
• and
• a vertically-oriented conductive region extending through a majority of the thickness of the semiconductor layer and electrically connecting the horizontally-oriented doped horizontal region and the underlying doped region, wherein:
• from a cross-sectional view, the vertically-oriented conductive region has an outer perimeter including points that are on opposite sides of the outer perimeter, and a line between the points passes through a centerpoint of a volume defined by the outer perimeter of the vertically-oriented conductive region;
• and
• at substantially all points along the line, the vertically-oriented conductive region includes a semiconductor-containing material having a same conductivity type;
• a conductive electrode overlying and electrically insulated from the conductive structure;
• a gate electrode overlying the primary surface of the semiconductor layer;
• and
• a gate signal line overlying the primary surface of the semiconductor layer, wherein the gate signal line overlies the conductive electrode.