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US 8,076,701 B2Granted
Large scale patterned growth of aligned one-dimensional nanostructures
AssigneeGeorgia Tech Research Corporation
InventorsZhong L. Wang, Christopher J. Summers, Xudong Wang, Elton D Graugnard, Jeffrey King
Life of this patent
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Abstract
A method of making nanostructures using a self-assembled monolayer of organic spheres is disclosed. The nanostructures include bowl-shaped structures and patterned elongated nanostructures. A bowl-shaped nanostructure with a nanorod grown from a conductive substrate through the bowl-shaped nanostructure may be configured as a field emitter or a vertical field effect transistor. A method of separating nanoparticles of a desired size employs an array of bowl-shaped structures.
Claims1
A field effect transistor circuit, comprising:
- a. a first nano-bowl structure, including a conductive substrate, an insulating layer disposed on the conductive substrate, a nano-bowl disposed on the insulating layer and an elongated nanostructure extending from the conductive substrate through the insulating layer into the nano-bowl and electrically isolated from the nano-bowl;
- and
- b. a second nano-bowl structure, in vertical alignment with the first nano-bowl structure, the second nano-bowl structure including a conductive substrate, an insulating layer disposed on the conductive substrate, a nano-bowl disposed on the insulating layer and an elongated nanostructure extending from the conductive substrate through the insulating layer into the nano-bowl and electrically isolated from the nano-bowl,
- whereby when a first electrical potential is applied to the substrate of the first nano-bowl structure;
- a second electrical potential, different from the first electrical potential, is applied to the nano-bowl of the first nano-bowl structure;
- and a third electrical potential, different from the first electrical potential, is applied to the substrate of the second nano-bowl structure, then the substrate of the first nano-bowl structure acts as a source, the nano-bowl of the first nano-bowl structure acts as a gate, and the substrate of the second nano-bowl structure acts as a drain.
3 more elements
Dependencies are inferred from the claim text.