P-N junction for use as an RF mixer from GHZ to THZ frequencies

A device comprising:

• a substrate wherein the substrate is GaAs or InP,
• wherein the substrate is undoped;
• a GaAs layer on the substrate,
• wherein the GaAs layer is undoped;
• an Al0.65Ga0.35Sb layer on the GaAs layer,
• wherein the Al0.65Ga0.35Sb layer is undoped;
• an In0.19Ga0.19 Al0.62Sb layer on the Al0.65Ga0.35Sb,
• wherein the In0.19Ga0.19Al0.62Sb layer is undoped;
• an InAs0.66Sb0.34 layer on the In0.19Ga0.19Al0.62Sb,
• wherein the InAs0.66Sb0.34 layer is Te doped;
• an In0.69Al0.31As0.41Sb0.59 layer with a top side and a bottom side,
• wherein the bottom side is on the InAs0.66Sb0.34 layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping;
• and
• a InzGa1-zSb layer on the In0.69Al0.31As0.41Sb0.59 layer,
• wherein the InzGa1-zSb layer is doped with Be and wherein z=0.27.

A method of making a p-n junction for use as an RF mixer from GHz to THz frequencies comprising:

• providing a GaAs substrate,
• wherein the GaAs substrate is undoped;
• growing by solid source molecular beam epitaxy a GaAs layer on the GaAs substrate,
• wherein the GaAs is undoped;
• growing by solid source molecular beam epitaxy a Al0.65Ga0.35Sb layer on the GaAs, wherein the Al0.65Ga0.35Sb layer is undoped;
• growing an by solid source molecular beam epitaxy In0.19Ga0.19Al0.62Sb layer on the Al0.65Ga0.35Sb
• wherein the In0.19Ga0.19 Al0.62Sb layer is undoped;
• growing by solid source molecular beam epitaxy an InAs0.66Sb0.34 layer,
• wherein the InAs0.66Sb0.34 layer is Te doped;
• growing by solid source molecular beam epitaxy a In0.69Al0.31As0.41Sb0.59 layer with a top side and a bottom side,
• wherein the bottom side is on the InAs0.66Sb0.34 layer and wherein the In0.69Al0.31As0.41Sb0.59 comprises varying levels of Te doping;
• growing a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41Sb0.59 layer,
• wherein the In0.27Ga0.73Sb layer is doped with Be.