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US 8,076,686 B2Granted
Light emitting diode and manufacturing method thereof
AssigneeEpistar Corporation
InventorsKuo-Hui Yu, Yu-Cheng Yang, An-Ru Lin, Tsun-Kai Ko, Wei-Shou Chen, Yi-Wen Ku, Cheng-Ta Kuo
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Abstract
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method includes the steps of: sequentially forming a bonding layer, a geometric pattern layer, a reflection layer, an epitaxial structure and a first electrode on a permanent substrate, wherein the geometric pattern layer has a periodic structure; and forming a second electrode on one side of the permanent substrate.
Claims6
A light emitting diode, comprises:
- a permanent substrate;
- a bonding layer disposed on one side of the permanent substrate;
- a geometric pattern layer disposed on the bonding layer, wherein the geometric pattern layer has a plurality of reversed trapezoid-shaped structures;
- a reflection layer disposed between the bonding layer and the geometric pattern layer;
- an epitaxial structure disposed on the geometric pattern layer, wherein the epitaxial structure comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer, and the first conductivity type semiconductor layer and the second conductivity type semiconductor layer are different conductivity types wherein the bonding layer is in direct and physical contact with the reflection layer and the epitaxial structure.
2 more elements
Dependencies are inferred from the claim text.