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US 8,076,682 B2Granted
Contact for a semiconductor light emitting device
AssigneesKoninklijke Philips Electronics N.V., Philips Lumileds Lighting Company, LLC
InventorJohn E. Epler
Life of this patent
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Abstract
A semiconductor structure includes a light emitting layer disposed between an n-type region and a p-type region. A p-electrode is disposed on a portion of the p-type region. The p-electrode includes a reflective first material in direct contact with a first portion of the p-type region and a second material in direct contact with a second portion of the p-type region adjacent to the first portion. The first material and second material are formed in planar layers of substantially the same thickness.
Claims8
A device comprising:
- a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region;
- and
- a p-electrode disposed on a portion of the p-type region, the p-electrode comprising:
- a reflective first material in direct contact with a first portion of the p-type region;
- and
- a second material in direct contact with a second portion of the p-type region adjacent to the first portion;
- wherein the first material and second material are different materials and are formed in planar layers of substantially the same thickness.
4 more elements
Dependencies are inferred from the claim text.