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US 8,076,679 B2Granted
Nitride-based semiconductor light-emitting diode and illuminating device
AssigneePanasonic Corporation
InventorsYoshitaka Kinoshita, Hidenori Kamei
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Abstract
A plurality of semiconductor layers including a light-emitting layer (14) are formed on the main surface of a substrate (10) which is composed of a group III-V nitride semiconductor. A first n-type semiconductor layer (12) containing indium is formed between the light-emitting layer (14) and the substrate (10), thereby reducing the affect of damage in the substrate surface. By having such a structure, there is realized a semiconductor light-emitting device having uniform characteristics.
Claims7
A light-emitting diode comprising:
- a substrate made of group III-V nitride semiconductor;
- a first n-type semiconductor layer containing indium and formed over a main surface of the substrate;
- a light-emitting layer formed over the first n-type semiconductor layer;
- a second n-type semiconductor layer formed between the substrate and the first n-type semiconductor layer;
- a third n-type semiconductor layer formed between the first n-type semiconductor layer and the light-emitting layer;
- and
- a fourth n-type semiconductor layer formed between the first n-type semiconductor layer and the light-emitting layer, the fourth n-type semiconductor layer being directly formed on the third n-type semiconductor layer,
- wherein the third n-type semiconductor layer is a contact layer on which an n-side electrode is formed.
5 more elements
An illuminating device comprising multiple light-emitting diodes,
- wherein the diodes including:
- a substrate made of group III-V nitride semiconductor;
- a first n-type semiconductor layer containing indium and formed over a main surface of the substrate;
- a light-emitting layer formed over the first n-type semiconductor layer;
- a second n-type semiconductor layer formed between the substrate and the first n-type semiconductor layer;
- a third n-type semiconductor layer formed between the first n-type semiconductor layer and the light-emitting layer;
- and
- a fourth n-type semiconductor layer formed between the first n-type semiconductor layer and the light-emitting layer, the fourth n-type semiconductor layer being directly formed on the third n-type semiconductor layer,
- wherein the third n-the semiconductor layer is a contact layer on which an n-side electrode is formed.
6 more elements
Dependencies are inferred from the claim text.